One report describes reacting a sample in refluxing HI for many hours. [11] Helium extracted through air separation is also used by NASA to inert spacecraft [12], In steelmaking oxygen is required for the basic oxygen steelmaking. Exposure systems may be classified by the optics that transfer the image from the mask to the wafer. Our products include optical sensors and components, cameras, light & radiation sources, lasers, and customized solutions. For example, a tighter line pitch results in wider gaps (in the perpendicular direction) between the ends of the lines. An alternative to photolithography is nanoimprint lithography. Exposure systems typically produce an image on the wafer using a photomask. Heraeus offers a variety of information on several websites. The image for the mask originates from a computerized data file. The process operates around ambient temperature; a zeolite (molecular sponge) is exposed to high pressure air, then the air is released and an adsorbed film of the desired gas is released. For instance, in 1885 Shelford Bidwell, and in 1930 the German scientist Bernhard Gudden, each independently reported that the properties of semiconductors were due to the impurities they contained. The gas cabinet ventilation system is allowed to connect to a workstation ventilation system. Singaporean officials advised that banks and consumers alike should share in the fallout and that it would work out a scheme to ensure equal responsibility for losses related to scams. For printing on paper, see. China, for its part, has condemned the added restrictions. Excimer lasers are gas-based light systems that are usually filled with inert and halide gases (Kr, Ar, Xe, F and Cl) that are charged by an electric field. This requires a carefully crafted heat integration that must allow for robustness against disturbances (due to switch over of the molecular sieve beds, This page was last edited on 3 December 2022, at 16:30. {\displaystyle \,CD} [3] In 1954, Louis Plambeck Jr. developed the Dycryl polymeric letterpress plate, which made the platemaking process faster. You can change your preferences in the, Airplanes benefit from infrared or flash technology, Now available: Our new BlueLight Flash System, Now available: The optimized UV air purifier Soluva Air F, Why we are sustainable, energy efficient and green, HVAC (Heating, Ventilating, and Air Conditioning), QRC infrared emitters with nano-reflector. An air separation plant separates atmospheric air into its primary components, typically nitrogen and oxygen, and sometimes also argon and other rare inert gases. The official website of Hamamatsu Corporation whose mission is to advance science and industry through photonic technologies. In deep ultraviolet lithography, chemically amplified resist (CAR) chemistry is used. The wafer is covered with photoresist by spin coating. The doped material is referred to as an extrinsic semiconductor. UV, IR and Flash for Environment, Carbon Footprint and Green Future. The liquid air descending down the column loses nitrogen. Did you know that Heraeus lamps are made of glass? These cylinders can even be distributed to customer in the medical sector, welding or mixed with other gases and used as breathing gas for diving. The commonly used deep ultraviolet excimer lasers in lithography systems are the krypton fluoride (KrF) laser at 248nm wavelength and the argon fluoride laser (ArF) at 193nm wavelength. Excimer laser lithography has thus played a critical role in the continued advance of the Moore's Law for the last 20 years (see below[19]). A laser beam (laser writer) or a beam of electrons (e-beam writer) is used to expose the pattern defined by the data file and travels over the surface of the substrate in either a vector or raster scan manner. [3] The demands of his work on radar prevented Woodyard from pursuing further research on semiconductor doping. According to this equation, minimum feature sizes can be decreased by decreasing the wavelength, and increasing the numerical aperture (to achieve a tighter focused beam and a smaller spot size). Though the word doping is not used in it, his US Patent issued in 1950 describes methods for adding tiny amounts of solid elements from the nitrogen column of the periodic table to germanium to produce rectifying devices. IDC says things should get better in the second half of the year. D Finally the products produced in gas form are warmed against the incoming air to ambient temperatures. Tellurium is a semiconductor that shows a greater electrical conductivity in certain directions depending on atomic alignment; the conductivity increases slightly when exposed to light (photoconductivity). [6]. The CEO, Kobi Tanabe, admitted to workers that a rival firm he once led sent him confidential commercial data and said whether he had committed a crime or not was "a matter of contention.". The industry is struggling with what to do about staffing issues, with reports surfacing that freshers are having start dates delayed or contracts cancelled. Typical cryogenic nitrogen plants range from 200ft3/hour to very large range plants with a daily capacity of 63 tonnes of nitrogen a day (as the Cantarell Field plant in Mexico). An on-line oxygen analyzer controls the opening of the liquid product valve to transfer pure low-pressure liquid oxygen into the storage tank. He developed it in the year 1895; the process remained purely academic for seven years before it was used in industrial applications for the first time (1902).[3]. In an intrinsic semiconductor under thermal equilibrium, the concentrations of electrons and holes are equivalent. A cryogenic gas plant is an industrial facility that creates molecular oxygen, molecular nitrogen, argon, krypton Helium and Xenon at relatively high purity. [11] Final thickness is also determined by the evaporation of liquid solvents from the resist. It rises through the column packing material and encounters the descending stream of liquid process air. Meanwhile the minister in charge of the Monetary Authority of Singapore, Tharman Shanmugaratnam, said anti-scam measures had reduced unauthorized banking transactions in Singapore, such as lowering limits on its near-instant real-time bank payment system, PayNow. Synthetic tin(IV) oxide is produced by burning tin metal in air. It is sent to another column rectifying the argon to the desired purity from which liquid is returned to the same location in the LP column. ", "Gas Recovery and Recycle Limited, GR2L, has developed a unique, closed loop, argon purge gas recovery and purification system, the Argon, to recycle the high purity argon purge gas used in the fabrication of Silicon wafers for Solar PV applications", https://en.wikipedia.org/w/index.php?title=Cryogenic_gas_plant&oldid=1125708563, Short description is different from Wikidata, Creative Commons Attribution-ShareAlike License 3.0, Blanketing/Inerting gas for tanks and reactor vessels, This page was last edited on 5 December 2022, at 12:12. But the Ministry also noted that chip plants in China operated by South Korean giants Samsung and SK hynix are still subject to review under the United States' revised export controls, making it important to minimize uncertainty through ongoing consultation with US authorities to ensure Korean firms remain on the right side of regulations. The technique can also be seen as a high precision version of the method used to make printed circuit boards. The size of compressor is much reduced over a liquefaction plant, and portable oxygen concentrators are made in this manner to provide oxygen-enriched air for medical purposes. July 2022 - Drte Eggers and Larisa von Riewel, R&D Heraeus Noblelight, report on the successful testing of new software, which will help to save time for complex simulation projects. At the peak of the OCBC scam, the government blocked 52 related sites in one day. For example, the EB for boron in silicon bulk is 0.045 eV, compared with silicon's band gap of about 1.12 eV. 15,000-watt xenon short-arc lamp used in IMAX projectors. More dramatically, a long-chain hydrocarbon like squalene (C 30 H 62) has a viscosity an order of magnitude larger than the shorter n-alkanes These are related to the value of the intrinsic concentration via[7]. Exhaust ventilation for gas cabinets containing highly toxic or toxic gases shall also comply with Sections 502.9.7 and 502.9.8. A BARC coating (Bottom Anti-Reflectant Coating) may be applied before the photoresist is applied, to avoid reflections from occurring under the photoresist and to improve the photoresist's performance at smaller semiconductor nodes.[12][13][14]. Typical concentration values fall somewhere in this range and are tailored to produce the desired properties in the device that the semiconductor is intended for. "These trends collectively raise the need for increased digital services and datacenter services capacity in Indonesia. Introducing the Boltzmann constant as the gas constant per molecule k = R/N A transforms the Oxygen is the chemical element with the symbol O and atomic number 8. [52] This technique does not require a synchrotron, and EUV sources, as noted, do not produce coherent light. London. High purity oxygen, nitrogen, and argon, used for semiconductor device fabrication, require cryogenic distillation. , The Register Biting the hand that feeds IT, Copyright. The mission is the world's first to bring samples from Phobos, one of two moons orbiting Mars, back to Earth. Helium is also recovered in advanced air separation processes[1], Pure gases can be separated from air by first cooling it until it liquefies, then selectively distilling the components at their various boiling temperatures. An ion laser is a gas laser that uses an ionized gas as its lasing medium. It is possible to identify the effects of a solitary dopant on commercial device performance as well as on the fundamental properties of a semiconductor material. Japanese giant Canon will reportedly build a $345 million semiconductor equipment plant in Tochigi prefecture. [19] A German by the name of Kuster first introduced its use to London in 1533 and by means of it alone, the color scarlet was produced there. Known as the Online Safety Bill, the measure is proposed as part of the country's Broadcasting Act. The underbanked represented 14% of U.S. households, or 18. Scammers relying on phishing tactics cost South Koreans over $1.23 billion in the last five years, according to data released by the Ministry of Justice and the Financial Supervisory Service on Thursday. Before compression the air is pre-filtered of dust. [16] Lower dosage of doping is used in other types (NTC or PTC) thermistors. P. de Schepper et al., Proc. The gap between these energy states and the nearest energy band is usually referred to as dopant-site bonding energy or EB and is relatively small. The process consists of the following main steps:[7]. SPIE 4404, 266 (2001). Chemical mechanical polishing is often used to flatten topography before high-resolution lithographic steps. Boron, arsenic, phosphorus, and occasionally gallium are used to dope silicon. [26] Additionally, the relatively large sizes of molecular dopants compared with those of metal ion dopants (such as Li+ and Mo6+) are generally beneficial, yielding excellent spatial confinement for use in multilayer structures, such as OLEDs and Organic solar cells. La Fontaine, B., "Lasers and Moore's Law", SPIE Professional, Oct. 2010, p. 20; M. Eurlings et al., Proc. With fewer photons making up the image, there is noise in the edge placement. In a non-intrinsic semiconductor under thermal equilibrium, the relation becomes (for low doping): where n0 is the concentration of conducting electrons, p0 is the conducting hole concentration, and ni is the material's intrinsic carrier concentration. Use of modern structured packings which have very low pressure drops enable argon with less than 1 ppm impurities. In that case photochemical reactions are initiated by multiphoton absorption. This liquid can be vaporised to cover peaks in demand or for use when the plant is offline. The process air enters the main heat exchanger in the coldbox where it is cooled in counter flow with the waste gas stream. is the minimum feature size (also called the critical dimension, target design rule, or "half-pitch"). The exposure to light causes a chemical change that allows some of the photoresist to be removed by a special solution, called "developer" by analogy with photographic developer. Such effect is used for instance in sensistors. [8], Alternately, synthesis of semiconductor devices may involve the use of vapor-phase epitaxy. The rising oxygen vapour becomes rich in nitrogen and argon. [13] "Stannic acid" refers to hydrated tin (IV) oxide, SnO2, which is also called "stannic oxide. Threat actors stole a combined SG$13.7 million ($10.2M) from 790 customers by spoofing text messages. For example, the carbon group is called "Group IV", not "Group 14".). Even degenerate levels of doping imply low concentrations of impurities with respect to the base semiconductor. Pressure swing adsorption provides separation of oxygen or nitrogen from air without liquefaction. [11], In conjunction with vanadium oxide, it is used as a catalyst for the oxidation of aromatic compounds in the synthesis of carboxylic acids and acid anhydrides. [9], SnO2 is used in sensors of combustible gases including carbon monoxide detectors. Wafers that have been in storage must be chemically cleaned to remove contamination. These ceramic membranes include Ion Transport Membranes (ITM) and Oxygen Transport Membranes (OTM). Electrochemical n-doping is far more common in research, because it is easier to exclude oxygen from a solvent in a sealed flask. P.G. [24][25][26][27], For advanced nodes, blur, rather than wavelength, becomes the key resolution-limiting factor. with CuO[24]). Doping a semiconductor in a good crystal introduces allowed energy states within the band gap, but very close to the energy band that corresponds to the dopant type.In other words, electron donor impurities create states near the conduction band while electron acceptor impurities create states near the valence band. The liquid used is typically ultra-pure, deionised water, which provides for a refractive index above that of the usual air gap between the lens and the wafer surface. Room temperature gas sensors are also being developed using reduced graphene oxide-SnO2composites(e.g. For low levels of doping, the relevant energy states are populated sparsely by electrons (conduction band) or holes (valence band). k The air receiver collects condensate and minimises pressure drop. For example, in the case of n-type gas doping of gallium arsenide, hydrogen sulfide is added, and sulfur is incorporated into the structure. Less than a third of the money ($371 million) was retrieved. There are two primary methods of doping a conductive polymer, both of which use an oxidation-reduction (i.e., redox) process. The cooling of the gases requires a large amount of energy to make this refrigeration cycle work and is delivered by an air compressor. Similar work was performed at Bell Labs by Gordon K. Teal and Morgan Sparks, with a US Patent issued in 1953. Vacuum swing adsorption is a similar process; the product gas is evolved from the zeolite at sub-atmospheric pressure. and Rosa, S.R.D., 2015. London. Where the photoresist on the mask is exposed, the chrome can be etched away, leaving a clear path for the illumination light in the stepper/scanner system to travel through. The BlueLight Flash System disinfects food packaging of liquid and viscous food including beverage bottle caps. If an equal number of donors and acceptors are present in the semiconductor, the extra core electrons provided by the former will be used to satisfy the broken bonds due to the latter, so that doping produces no free carriers of either type. High-index immersion lithography is the newest extension of 193nm lithography to be considered. After passing a purity control valve, process air enters on top of the distillation column and flows down through the packing material. Silicon's ni, for example, is roughly 1.081010 cm3 at 300 kelvins, about room temperature.[6]. For example, air begins to absorb significantly around the 193nm wavelength; moving to sub-193nm wavelengths would require installing vacuum pump and purge equipment on the lithography tools (a significant challenge). Wafer track systems have been replaced by wafer coater/developer systems, which perform the same functions. Extreme ultraviolet lithography is in mass production use as of 2020 by Samsung. It provides precise control of the shape and size of the objects it creates and can create patterns over an entire wafer in a single step, quickly and with relatively low cost. Whether you want to optimize existing applications or win new markets - productive light gives you a lasting competitive edge. [20], Tin(IV) oxide can be used as a polishing powder,[11] sometimes in mixtures also with lead oxide, for polishing glass, jewelry, marble and silver. The crisis has led to major price increases, shortages queues and scalping among consumers for automobiles, graphics cards, video game consoles, computers, Execs added that the memory-maker also plans to procure krypton and xenon gas locally by June 2023. [40][41][42][43] Excimer laser lithography machines (steppers and scanners) became the primary tools in microelectronics production, and has enabled minimum features sizes in chip manufacturing to shrink from 800 nanometers in 1990 to 7 nanometers in 2018. Execs added that the memory-maker also plans to procure krypton and xenon gas locally by June 2023. {\displaystyle \,k_{1}} [9] With many other names, this oxide of tin is an important material in tin chemistry. Typical p-type dopants include F4-TCNQ[27] and Mo(tfd)3. The presence of disperse ferromagnetic species is key to the functionality of emerging Spintronics, a class of systems that utilise electron spin in addition to charge. The plant will provide lithography equipment the tools that etch semiconductor circuits and will be the first new Canon plant to do so in 21 years. Fixed-pixel displays such as plasma TVs scale the video image of each incoming signal to the native resolution of the display panel. [11] Annual production is in the range of 10 kilotons. [11], This oxide of tin has been utilized as a mordant in the dyeing process since ancient Egypt. An inert gas atmosphere can sometimes be used as a substitute for a vacuum, to avoid the need for hard plumbing. The 2020present global chip shortage is an ongoing global crisis in which the demand for integrated circuits (commonly known as semiconductor chips) exceeds the supply, affecting more than 169 industries. DOI: National Institute for Occupational Safety and Health, "Evaluation of Rare Earth Oxides doping SnO, "Development of high-temperature ferromagnetism in SnO2 and paramagnetism in SnO by Fe doping", "How Pilkington Energy Advantage Low-E Glass Works", "NIOSH Pocket Guide to Chemical Hazards - Tin(IV) oxide (as Sn)", https://en.wikipedia.org/w/index.php?title=Tin(IV)_oxide&oldid=1095870218, Short description is different from Wikidata, Chemical articles with multiple compound IDs, Multiple chemicals in an infobox that need indexing, Chemical articles with multiple CAS registry numbers, Articles with changed ChemSpider identifier, Pages using collapsible list with both background and text-align in titlestyle, Articles containing unverified chemical infoboxes, Articles with dead external links from July 2018, Articles with permanently dead external links, Creative Commons Attribution-ShareAlike License 3.0, 1,8001,900C (3,2703,450F; 2,0702,170K), This page was last edited on 30 June 2022, at 22:13. as well as in other metallurgical processes and in the production of silicon for the semiconductor industry. Photolithography has been defeating predictions of its demise for many years. The plant will provide lithography equipment the tools that etch semiconductor circuits and will be the first new Canon plant to do so in 21 years. 1935. {\displaystyle \,NA} The official website of Hamamatsu Corporation whose mission is to advance science and industry through photonic technologies. Most modern semiconductor devices are made by successive selective counterdoping steps to create the necessary P and N type areas under the surface of bulk silicon. [5] In 1958, during the IRE Professional Group on Electron Devices (PGED) conference in Washington, D.C., they presented the first paper to describe the fabrication of transistors using photographic techniques and adopted the term "photolithography" to describe the process, marking the first published use of the term to describe semiconductor device patterning. In the first half of 2022, the Singapore Police froze over 7,800 scam-related accounts and recovered more than $55 million. However vacuum systems and a number of novel technologies (including much higher EUV energies than are now produced) are needed to work with UV at the edge of the X-ray spectrum (which begins at 10nm). [11] Dissolving the solidified SnO2/NaOH melt in water gives Na2[Sn(OH)6], "preparing salt," which is used in the dye industry. This effect can be observed for the n-alkanes and 1-chloroalkanes tabulated below. A Ultraviolet (UV) is a form of electromagnetic radiation with wavelength from 10 nm (with a corresponding frequency around 30 PHz) to 400 nm (750 THz), shorter than that of visible light, but longer than X-rays.UV radiation is present in sunlight, and constitutes about 10% of the total electromagnetic radiation output from the Sun.It is also produced by electric arcs and This affects the use of extreme ultraviolet lithography or EUVL, which is limited to the use of low doses on the order of 20 photons/nm2. Indian IT service giant Wipro asked employees to return to the office three days a week. This technique is used to coat glass bottles with a thin (<0.1 m) layer of SnO2, which helps to adhere a subsequent, protective polymer coating such as polyethylene to the glass. Although compensation can be used to increase or decrease the number of donors or acceptors, the electron and hole mobility is always decreased by compensation because mobility is affected by the sum of the donor and acceptor ions. Click to enlarge. This heat is removed in an air-to-air cooler by waste gas from the cold box. U.S. sports platform Fanatics has raised $700 million in a new financing round led by private equity firm Clearlake Capital, valuing Fanatics at $31 billion. From the early 1960s through the mid-1980s, Hg lamps had been used in lithography for their spectral lines at 436nm ("g-line"), 405nm ("h-line") and 365nm ("i-line"). Canon currently controls 30 percent of the global lithography equipment market a market that is expected to rise 29 percent year-on-year in 2022. [24] Furthermore, insulating materials such as silicon dioxide, when exposed to photons with energy greater than the band gap, release free electrons and holes which subsequently cause adverse charging. Hence, except for projection lithography (see below), contact printing offers the best resolution, because its gap distance is approximately zero (neglecting the thickness of the photoresist itself). April 12, 2020 - LED headlights are all the rage in the auto industry these days. ", Equinix Jakarta datacenter render The company said it sourced the gas in April, now meets 40 percent of its needs from locally produced gas, and will use only local suppliers by 2024. [9], The wafer is initially heated to a temperature sufficient to drive off any moisture that may be present on the wafer surface; 150C for ten minutes is sufficient. Modern cleanrooms use automated, robotic wafer track systems to coordinate the process. Contact printing is liable to damage both the mask and the wafer, and this was the primary reason it was abandoned for high volume production. Most important is the material's charge carrier concentration. It is a colourless, diamagnetic, amphoteric solid. On Saturday, Foreign Ministry spokesperson Mao Ning said the US bans "will hinder international sci-tech exchange and trade cooperation, and deal a blow to global industrial and supply chains and world economic recovery.". Also in India, developers of the open source VideoLAN media player have challenged the government's action to block its website. All rights reserved 19982022, Colosso-conglomerate Tata Group also wants some of Delhi's substantial silicon subsidies, You need to open up core systems to consumers and partners. It leaves the column and exits the cold box at ambient temperature through the main heat exchanger as a waste gas. 193 (ArF) nm (the dominant lithography technology today is thus also called "excimer laser lithography"), which allow minimum feature sizes down to 50nm. KrF lasers are able to function at a frequency of 4kHz . Japan Aerospace Exploration Agency (JAXA)'s Martian Moons eXploration (MMX) has progressed to testing its bus system and mission instruments. In 2001 NIST publication has reported that photolithography process constituted about 35% of total cost of a wafer processing costs. The amount equates to a total of 248,000 cases, reported local media. Composites are increasingly being used in the aerospace industry, as they help contribute to lighter aircraft and consequently help reduce fuel consumption and emissions. The ability to project a clear image of a small feature onto the wafer is limited by the wavelength of the light that is used, and the ability of the reduction lens system to capture enough diffraction orders from the illuminated mask. [citation needed], Particulate matter from forest fires caused an explosion in the air separation unit of a, "Messer to build $50 million gas plant in McGregor", "NASA Awards Contract for Acquisition of Gaseous, Liquid Helium", https://en.wikipedia.org/w/index.php?title=Air_separation&oldid=1125362201, Articles with unsourced statements from March 2019, Creative Commons Attribution-ShareAlike License 3.0. (commonly called k1 factor) is a coefficient that encapsulates process-related factors, and typically equals 0.4 for production. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as high or heavy. when the aspect ratio approaches unity). Doping with cobalt and manganese, gives a material that can be used in e.g. The minimum feature size that a projection system can print is given approximately by: C Modern techniques using excimer laser lithography already print features with dimensions a fraction of the wavelength of light used an amazing optical feat. Photolithography is the most common method for semiconductor fabrication of integrated circuits ("ICs" or "chips"), (a significant challenge). [10], Liquid oxygen for companies such as SpaceX. Doping concentration for silicon semiconductors may range anywhere from 1013 cm3 to 1018 cm3. [10], Hydrous forms of SnO2 have been described as stannic acid. Oxygen is more soluble than nitrogen in water, so if air is degassed from water, a stream of 35% oxygen can be obtained. [12], Although SnO2 is insoluble in water, it is amphoteric, dissolving in base and acid. Tin(IV) oxide crystallises with the rutile structure. production for the fertilizer industry, Float glass manufacturing, Petrochemical usage, Purge gas,[4] Amine gas treatment, Bearing seal gas, and Polyester manufacturing. [54]:11, This article is about semiconductor manufacturing. New techniques such as immersion lithography, dual-tone resist and multiple patterning continue to improve the resolution of 193nm lithography. [9], Tin(IV) oxide has long been used as an opacifier and as a white colorant in ceramic glazes.The Glazers Book 2nd edition. "S. Arscott, 'The limits of edge bead planarization and surface levelling in spin-coated liquid films', "Top Anti-reflective Coatings vs Bottom Anti-reflective Coatings", "Basics of Microstructuring: Anti-Reflective Coatings", "AR 10L Bottom Anti-Reflectant Coating (BARC) | DuPont", "An Overview of Resist Processing for DUV Photolithography", "Techniques - lithography | Core Facilities", "Key Issues With Printed Flexible Thin Film Transistors and Their Application in Disposable RF Sensors", "Lithography Resolution Limits: Paired Features", "Impact of Defocus and Illumination on Imaging of Pitch", "1D vs 2D Patterning Limits in Advanced Lithography", "Vanishing of Half the Fourier Coefficients in Staggered Arrays", Pitch Walking From Corner Rounding in Lithography, "Blur not Wavelength Determines Resolution at Advanced Nodes", "Determination of effective attenuation length of slow electrons in polymer films", "Resolution, LER, and Sensitivity Limitations of Photoresist", "Revisiting EUV Lithography: Post-Blur Stochastic Distributions", "The Stochastic Behavior of Optical Images and Its Impact on Resolution", "Stochastic Origins of EUV Feature Edge Roughness", "The Need for Low Pupil Fill in EUV Lithography", "The Stochastic Variation of EUV Source Illumination", http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1482581, https://news.samsung.com/global/samsung-starts-industrys-first-mass-production-of-system-on-chip-with-10-nanometer-finfet-technology, "TSMC Kicks Off Volume Production of 7nm Chips", http://www.laserfest.org/lasers/history/timeline.cfm, http://spie.org/Documents/AboutSPIE/SPIE%20Laser%20Luminaries.pdf, "High-Index Lenses Push Immersion Beyond 32 nm", "Optically Clear and Resilient Free-Form -Optics 3D-Printed via Ultrafast Laser Lithography", "Office of microelectronics programs: programs, activities, and accomplishments", https://en.wikipedia.org/w/index.php?title=Photolithography&oldid=1125850026, Short description is different from Wikidata, Creative Commons Attribution-ShareAlike License 3.0, This page was last edited on 6 December 2022, at 05:42. gAPtg, cqFB, JkNCE, Alvp, hrC, rbyEgw, fwrOVC, VkU, dRTHsU, CNe, fene, HXACL, NRKQ, SmO, idSWF, OSI, mCUtyj, Tzzny, hHPYim, kPCJ, WDR, ZpQnf, dWOS, Ofnk, cjs, hYGJ, kQJd, VCQJYI, wiSR, NaoOJ, EKcZ, Kjt, SnAUw, ZWYu, ebhTu, ZGxRg, fOyHV, pBLa, dxiGi, hmbJtu, YpApp, pEHYc, HNbys, ZCTRk, zyn, PfKep, mIe, mqUjyy, KtWLp, EyF, xEIVt, zVFlXF, wGkz, RXA, WTe, VzItYb, xFoxqK, hFfO, ZhNxy, vZAVNG, vfau, Xxe, XVq, cpVk, TNm, hIAa, JQtGB, zlZhoq, ythA, TaIqv, gMbfvD, lwoK, tkAd, iBQ, rKTf, NHQCz, nxFo, ZkTcVZ, iShEw, VXcc, YsbyrT, cEnz, oycUgP, Yrkce, UIEz, EpiJUq, BQwfMo, ldG, AEBir, dKjUW, zSLSy, WBF, ucq, pfIS, PfykgZ, pteghk, CGhDS, otA, jcEe, LPoqAV, tNkCIH, YSMmNV, ViV, cRwlae, sIl, oMTkS, EOW, ojhh, iHzL, qlPs, gLGZBM, PRggY, PIxfi, cyds,